Mott gap excitations and resonant inelastic x-ray scattering in doped cuprates

被引：53

作者：

Tsutsui, K ^{[1
]}

Tohyama, T ^{[1
]}

Maekawa, S ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 91卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.91.117001

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Predictions are made for the momentum- and carrier-dependent degradation of the Mott gap upon doping in high-T-c cuprates as would be observed in Cu K-edge resonant inelastic x-ray scattering (RIXS). The two-dimensional Hubbard model with second- and third-nearest-neighbor hopping terms has been studied by numerical exact diagonalization. Special emphasis is placed on the particle-hole asymmetry of the Mott gap excitations. We argue that the Mott gap excitations observed by RIXS are significantly influenced by the interaction between charge carriers and antiferromagnetic correlations.

引用

页码：117001 / 117001

页数：4

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