Temperature dependence of the radiative recombination zone in InGaN/GaN multiple quantum well light-emitting diodes

被引：47

作者：

Lee, CM ^{[1
]}

Chuo, CC ^{[1
]}

Dai, JF ^{[1
]}

Zheng, XF ^{[1
]}

Chyi, JI ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 11期

关键词：

D O I：

10.1063/1.1370995

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature dependence of the radiative recombination zone in InGaN/GaN multiple quantum well light-emitting diodes is investigated. From the electroluminescence spectra measured at various temperatures, it is found that there are two peaks at about 400 and 460 nm, which can be assigned as Mg-related and quantum well transitions, respectively. The behavior of these two peaks with temperature is modeled by the two rate equation. Based on this model, we deduce the activation energy of Mg in GaN films to be about 126 meV, which is consistent with reported results obtained by other techniques. (C) 2001 American Institute of Physics.

引用

页码：6554 / 6556

页数：3

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