Rectangular waveguide output unitraveling-carrier photodiode module for high-power photonic millimeter-wave generation in the F-Band

被引:53
作者
Ito, H [1 ]
Ito, T
Muramoto, Y
Furuta, T
Ishibashi, T
机构
[1] NTT Corp, NTT Photon Labs, Kanagawa 2430198, Japan
[2] NTT Elect Corp, Tokyo 1940004, Japan
关键词
impedance transformer; millimeter-wave generation; rectangular waveguide output module; semiconductor heterojunction; unitraveling-carrier photodiode;
D O I
10.1109/JLT.2003.821747
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A compact unitraveling-carrier photodiode (UTC-PD) module with a WR-8 rectangular waveguide output port for operation in the F-band (90-140 GHz) has been developed. A resonating matching circuit integrated with a UTC-PD and a microstrip-line-to-rectangular-waveguide transformer are designed to have high output powers with a wide bandwidth covering the F-band. The module size and configuration are equivalent to those of conventional optoelectronic devices, which enables the use of standard assembly technology. The fabricated module exhibits a record millimeter-wave output power of 17 MW at 120 GHz for a bias voltage of -3 V. The 3-dB bandwidth is as wide as 55 GHz, which fully covers the F-band. An optical input stress test at a photocurrent of 10 mA performed to confirm the long-term stability of the module showed that the dark current stays below 1 muA for more than 4000 hours.
引用
收藏
页码:3456 / 3462
页数:7
相关论文
共 24 条
[1]   High efficiency edge-illuminated unitravelling-carrier-structure refracting-facet photodiode [J].
Fukano, H ;
Muramoto, Y ;
Takahata, K ;
Matsuoka, Y .
ELECTRONICS LETTERS, 1999, 35 (19) :1664-1665
[2]  
Furuta T, 2002, ELECTRON LETT, V38, P332, DOI [10.1049/el:20020213, 10.1049/el:20020237]
[3]  
HIRATA A, 2002, 3 JAP KOR JOINT WORK, P95
[4]   Efficient generation of guided millimeter-wave power by photomixing [J].
Huggard, PG ;
Ellison, BN ;
Shen, P ;
Gomes, NJ ;
Davies, PA ;
Shillue, WP ;
Vaccari, A ;
Payne, JM .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (02) :197-199
[5]   Generation of millimetre and sub-millimetre waves by photomixing in 1.55 μm wavelength photodiode [J].
Huggard, PG ;
Ellison, BN ;
Shen, P ;
Gomes, NJ ;
Davies, PA ;
Shillue, W ;
Vaccari, A ;
Payne, JM .
ELECTRONICS LETTERS, 2002, 38 (07) :327-328
[6]  
Ishibashi T, 2000, IEICE T ELECTRON, VE83C, P938
[7]  
ISHIBASHI T, 1997, ULTRAFAST ELECT OPTO, P83
[8]  
ISHIGURO M, 2002, 435 ALMA
[9]   InP/lnGaAs uni-travelling-carrier photodiode with 310GHz bandwidth [J].
Ito, H ;
Furuta, T ;
Kodama, S ;
Ishibashi, T .
ELECTRONICS LETTERS, 2000, 36 (21) :1809-1810
[10]   60GHz high output power uni-travelling-carrier photodiodes with integrated bias circuit [J].
Ito, H ;
Ohno, T ;
Fishimi, H ;
Furuta, T ;
Kodama, S ;
Ishibashi, T .
ELECTRONICS LETTERS, 2000, 36 (08) :747-748