High efficiency edge-illuminated unitravelling-carrier-structure refracting-facet photodiode

被引：36

作者：

Fukano, H ^{[1
]}

Muramoto, Y ^{[1
]}

Takahata, K ^{[1
]}

Matsuoka, Y ^{[1
]}

机构：

[1] NTT, Photon Labs, Kanagawa 2430198, Japan

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 19期

关键词：

D O I：

10.1049/el:19991148

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-efficiency uni-travelling carrier (UTC) photodiode has been developed which employs an edge-illuminated refracting-facet photodiode (RFPD) structure. The fabricated UTC-RFPD shows a maximum responsivity of 0.48A/W even with an absorption layer as thin as 2808nm, and a high output peak-to-peak voltage of 1.5V at 40Gbit/s.

引用

页码：1664 / 1665

页数：2

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