InP-InGaAs uni-traveling-carrier photodiode with improved 3-dB bandwidth of over 150 GHz

被引：132

作者：

Shimizu, N ^{[1
]}

Watanabe, N ^{[1
]}

Furuta, T ^{[1
]}

Ishibashi, T ^{[1
]}

机构：

[1] NTT Corp, Syst Elect Labs, Kanagawa 24301, Japan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 03期

关键词：

electrooptic measurements; high-speed devices; optical fiber communication; p-i-n photodiodes; semiconductor heterojunctions; space charge;

D O I：

10.1109/68.661427

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Uni-traveling-carrier photodiodes (UTC-PD's) with ultrafast response and high-saturation output are reported. It is experimentally demonstrated that the photoresponse of UTC-PD's is improved by incorporating a step-like potential profile in the photoabsorption layer. The fabricated device shows a peak electrical 3-dB bandwidth of 152 GHz at a low reverse bias voltage of -1.5 V. The output voltage can be increased to as high as 1.9 V at higher reverse bias voltages with the 3-dB bandwidth staying at over three-quarters of the maximum value. To our knowledge, the obtained response is the fastest among those reported for 1.55-mu m wavelength photodiodes.

引用

页码：412 / 414

页数：3

共 9 条

[1]

[Anonymous], ULTR EL OPT OSA SPR

[2] A 920-1650-nm high-current photodetector [J].

Davis, GA ;

Weiss, RE ;

LaRue, RA ;

Williams, KJ ;

Esman, RD .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (10) :1373-1375

[3]

GRAY S, CLEO PAC RIM 97

[4]

HAGIMOTO K, OFC 92, P48

[5] FABRICATION AND CHARACTERIZATION OF HIGH-PERFORMANCE INP/INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

KURISHIMA, K ;

NAKAJIMA, H ;

KOBAYASHI, T ;

MATSUOKA, Y ;

ISHIBASHI, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (08) :1319-1326

[6] Velocity-matched distributed photodetectors with high-saturation power and large bandwidth [J].

Lin, LY ;

Wu, MC ;

Itoh, T ;

Vang, TA ;

Muller, RE ;

Sivco, DL ;

Cho, AY .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (10) :1376-1378

[7]

MIYAMOTO Y, CLEO PAC RIM 97

[8]

NAGATSUMA T, 1994, ELECTRON LETT, V30, P514

[9] A GA0.47IN0.53AS-INP HETEROPHOTODIODE WITH REDUCED DARK CURRENT [J].

PEARSALL, TP ;

PISKORSKI, M ;

BROCHET, A ;

CHEVRIER, J .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :255-259

← 1 →