A 920-1650-nm high-current photodetector

被引:44
作者
Davis, GA [1 ]
Weiss, RE [1 ]
LaRue, RA [1 ]
Williams, KJ [1 ]
Esman, RD [1 ]
机构
[1] USN,RES LAB,WASHINGTON,DC 20375
关键词
D O I
10.1109/68.536659
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present novel (InGa)As photodetectors which exhibit 150 mA continuous photocurrent at 2 W power dissipation, A responsivity of 0.97 A/W at 1319 nm is achieved with greater than 60% external quantum efficiency from 920 to 1650 nm, Measured dark currents are below 1 nA and bandwidths of 295 MHz are achieved, These low dark-current devices have utility to applications requiring large output current and large dynamic range.
引用
收藏
页码:1373 / 1375
页数:3
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