FABRICATION AND CHARACTERIZATION OF HIGH-PERFORMANCE INP/INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：93

作者：

KURISHIMA, K

NAKAJIMA, H

KOBAYASHI, T

MATSUOKA, Y

ISHIBASHI, T

机构：

[1] NTT LSI Laboratories, Atsugi-shi

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 08期

关键词：

D O I：

10.1109/16.297724

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper is on high-performance InP/InGaAs double-heterojunction bipolar transistors (DHBT's) utilizing compositionally step-graded InGaAsP layers between the InGaAs base and InP collector to suppress the current blocking effect. These DHBT's exhibit current gains of 200 and excellent breakdown behavior. Moreover, the DHBT's permit collector current density levels J(C) up to 3 x 10(5)A/cm2 at V(CE) = 1.5 V. A current gain cutoff frequency of 155 GHz and a maximum oscillation frequency of 90 GHz have been successfully obtained at J(C) = 1.6 x 10(5)A/cm2. We have also investigated electron transport properties in the InP collector using a set of DHBT's with different injection energies into the InP collector. By increasing the injection energies, electron velocity is found to decrease from 3.5 x 10(7)cm/s to 1.6 x 10(7) cm/s, due to increased population of upper valleys. This result clearly demonstrates the significant role of nonequilibrium GAMMA-valley transport in determining the high-speed performance of InP/InGaAs DHBT's.

引用

页码：1319 / 1326

页数：8

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