INP/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS GROWN AT LOW-TEMPERATURE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：10

作者：

KURISHIMA, K

MAKIMOTO, T

KOBAYASHI, T

ISHIBASHI, T

机构：

[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa, 243-01

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 2B期

关键词：

INP; INGAAS; HBT; MOCVD; ZN DIFFUSION;

D O I：

10.1143/JJAP.30.L258

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe the performance of InP/InGaAs heterostructure bipolar transistors (HBTs) grown at low temperature by metalorganic chemical vapor deposition (MOCVD). HBTs with a base thickness of 70 nm and doping level of 1 x 10(19) cm-3 show excellent current gain characteristics (current gains h(FE) > 300, ideality factors n(B) < 1.25) at growth temperatures ranging from 500 to 575-degrees-C. In addition, Zn out-diffusion from the base layers into the undoped spacer layers is well suppressed to as low as 5 x 10(17) cm-3.

引用

页码：L258 / L261

页数：4

共 7 条

[1] HIGH-GAIN INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY OMCVD [J].