GENERATION-RECOMBINATION CURRENT IN THE EMITTER-BASE JUNCTION OF ALGAAS/GAAS HBTS

[1] Asbeck P. M., 1984, GaAs IC Symposium Technical Digest 1984 (Cat. No. 84CH2065-1), P133

[2] THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 800 - 803

[3] GAAS/(GAAL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS USING A SELF-ALIGNED SUBSTITUTIONAL EMITTER PROCESS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) : 8 - 10

[4] DUBON C, 1984, I C SER, V74, P175

[5] ANOMALOUS REDISTRIBUTION OF BERYLLIUM IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4130 - 4134

[6] ENQUIST P, 1984, I PHYS C SER, V74, P599

[7] BERYLLIUM DOPING AND DIFFUSION IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 1278 - 1287

[8] EXTREMELY LOW RESISTANCE OHMIC CONTACTS TO NORMAL-GAAS FOR ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L635 - L637

[9] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25

[10] BERYLLIUM REDISTRIBUTION DURING GROWTH OF GAAS AND ALGAAS BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 1816 - 1822

[1] Asbeck P. M., 1984, GaAs IC Symposium Technical Digest 1984 (Cat. No. 84CH2065-1), P133

[2] THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 800 - 803

[3] GAAS/(GAAL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS USING A SELF-ALIGNED SUBSTITUTIONAL EMITTER PROCESS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) : 8 - 10

[4] DUBON C, 1984, I C SER, V74, P175

[5] ANOMALOUS REDISTRIBUTION OF BERYLLIUM IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4130 - 4134

[6] ENQUIST P, 1984, I PHYS C SER, V74, P599

[7] BERYLLIUM DOPING AND DIFFUSION IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 1278 - 1287

[8] EXTREMELY LOW RESISTANCE OHMIC CONTACTS TO NORMAL-GAAS FOR ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L635 - L637

[9] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25

[10] BERYLLIUM REDISTRIBUTION DURING GROWTH OF GAAS AND ALGAAS BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 1816 - 1822