HIGH-GAIN INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY OMCVD

被引：8

作者：

BHAT, R

HAYES, JR

SCHUMACHER, H

KOZA, MA

HWANG, DM

MEYNADIER, MH

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(88)90640-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：919 / 923

页数：5

共 10 条

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[2] OMCVD-GROWN INP/GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

HAYES, JR ;

BHAT, R ;

SCHUMACHER, H ;

KOZA, M .

ELECTRONICS LETTERS, 1987, 23 (24) :1298-1299

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HAYES, JR ;

CAPASSO, F ;

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GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :949-951

[4] DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS IN INP/GALNAS GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].

HOUSTON, PA ;

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DAY, DJ ;

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ELECTRONICS LETTERS, 1987, 23 (18) :931-932

[5] HIGH-PERFORMANCE, LONG WAVELENGTH OPTOELECTRONIC COMPONENTS BY ATMOSPHERIC-PRESSURE MOVPE [J].

NELSON, AW ;

COLE, S ;

WONG, S ;

HARLOW, MJ ;

DEVLIN, WJ ;

WAKE, D ;

RODGERS, PM ;

ROBERTSON, MJ .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :579-590

[6]

NOTTENBURG RN, 1986, APPL PHYS LETT, V49, P112

[7] INGAAS PHOTODIODES PREPARED BY LOW-PRESSURE MOCVD [J].

POULAIN, P ;

RAZEGHI, M ;

KAZMIERSKI, K ;

BLONDEAU, R ;

PHILIPPE, P .

ELECTRONICS LETTERS, 1985, 21 (10) :441-442

[8] 1.2-1.6-MU-M GAXIN1-XASYP1-Y-INP DH LASERS GROWN BY LPMOCVD [J].

RAZEGHI, M ;

DECREMOUX, B ;

DUCHEMIN, JP .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :389-397

[9] VERY LOW THRESHOLD GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS GROWN BY LP MOCVD [J].

RAZEGHI, M ;

HERSEE, S ;

HIRTZ, P ;

BLONDEAU, R ;

DECREMOUX, B ;

DUCHEMIN, JP .

ELECTRONICS LETTERS, 1983, 19 (09) :336-337

[10] OMVPE GROWTH OF INGAASP MATERIALS FOR LONG WAVELENGTH DETECTORS AND EMITTERS [J].

SAXENA, R ;

SARDI, V ;

OBERSTAR, J ;

HODGE, L ;

KEEVER, M ;

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CHEN, KL ;

MOON, R .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :591-597

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