A COMPARISON OF IV-N-DOPANTS AND VI-N-DOPANTS FOR MOVPE-GROWN INP

[1] SE DOPING MECHANISMS IN MOCVD GAAS-LAYERS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (10): : L815 - L817

[2] MOCVD N-TYPE DOPING OF GAAS AND GAALAS USING SILICON AND SELENIUM AND FABRICATION OF DOUBLE HETEROSTRUCTURE BIPOLAR-TRANSISTOR [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 453 - 460

[3] SILICON AND GERMANIUM DOPING OF EPITAXIAL GALLIUM-ARSENIDE GROWN BY THE TRIMETHYLGALLIUM-ARSINE METHOD [J]. JOURNAL OF CRYSTAL GROWTH, 1979, 47 (5-6) : 613 - 618

[4] BASS SJ, 1977, I PHYSICS C SERIES B, V33, P1

[5] MOVPE GROWTH OF SIO2-MASKED INP STRUCTURES AT REDUCED PRESSURES [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 334 - 339

[6] INSITU VAPOR-ETCH FOR INP MOVPE USING ETHYLENE DIBROMIDE [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) : 346 - 356

[7] LOW-PRESSURE MOVPE OF INP FROM TRIMETHYLINDIUM AND PHOSPHINE [J]. JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (02) : 111 - 116

[8] A MATHEMATICAL-MODEL OF THE COUPLED FLUID-MECHANICS AND CHEMICAL-KINETICS IN A CHEMICAL VAPOR-DEPOSITION REACTOR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (02) : 425 - 434

[9] A MATHEMATICAL-MODEL OF SILICON CHEMICAL VAPOR-DEPOSITION - FURTHER REFINEMENTS AND THE EFFECTS OF THERMAL-DIFFUSION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) : 1206 - 1213

[10] NEW METHOD FOR GROWING GAAS EPILAYERS BY LOW-PRESSURE ORGANOMETALLICS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) : 1134 - 1149

[1] SE DOPING MECHANISMS IN MOCVD GAAS-LAYERS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (10): : L815 - L817

[2] MOCVD N-TYPE DOPING OF GAAS AND GAALAS USING SILICON AND SELENIUM AND FABRICATION OF DOUBLE HETEROSTRUCTURE BIPOLAR-TRANSISTOR [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 453 - 460

[3] SILICON AND GERMANIUM DOPING OF EPITAXIAL GALLIUM-ARSENIDE GROWN BY THE TRIMETHYLGALLIUM-ARSINE METHOD [J]. JOURNAL OF CRYSTAL GROWTH, 1979, 47 (5-6) : 613 - 618

[4] BASS SJ, 1977, I PHYSICS C SERIES B, V33, P1

[5] MOVPE GROWTH OF SIO2-MASKED INP STRUCTURES AT REDUCED PRESSURES [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 334 - 339

[6] INSITU VAPOR-ETCH FOR INP MOVPE USING ETHYLENE DIBROMIDE [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) : 346 - 356

[7] LOW-PRESSURE MOVPE OF INP FROM TRIMETHYLINDIUM AND PHOSPHINE [J]. JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (02) : 111 - 116

[8] A MATHEMATICAL-MODEL OF THE COUPLED FLUID-MECHANICS AND CHEMICAL-KINETICS IN A CHEMICAL VAPOR-DEPOSITION REACTOR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (02) : 425 - 434

[9] A MATHEMATICAL-MODEL OF SILICON CHEMICAL VAPOR-DEPOSITION - FURTHER REFINEMENTS AND THE EFFECTS OF THERMAL-DIFFUSION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) : 1206 - 1213

[10] NEW METHOD FOR GROWING GAAS EPILAYERS BY LOW-PRESSURE ORGANOMETALLICS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) : 1134 - 1149