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A COMPARISON OF IV-N-DOPANTS AND VI-N-DOPANTS FOR MOVPE-GROWN INP
被引:18
作者
:
CLAWSON, AR
论文数:
0
引用数:
0
h-index:
0
CLAWSON, AR
VU, TT
论文数:
0
引用数:
0
h-index:
0
VU, TT
ELDER, DI
论文数:
0
引用数:
0
h-index:
0
ELDER, DI
机构
:
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1987年
/ 83卷
/ 02期
关键词
:
D O I
:
10.1016/0022-0248(87)90010-8
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:211 / 218
页数:8
相关论文
共 18 条
[11]
DOPING OF GALLIUM-ARSENIDE IN A LOW-PRESSURE ORGANOMETALLIC CVD SYSTEM .1. SILANE
[J].
FIELD, RJ
论文数:
0
引用数:
0
h-index:
0
FIELD, RJ
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
GHANDHI, SK
.
JOURNAL OF CRYSTAL GROWTH,
1986,
74
(03)
:543
-550
[12]
DOPING STUDIES FOR INP GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
[J].
HSU, CC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT MAT SCI & ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT MAT SCI & ENGN,SALT LAKE CITY,UT 84112
HSU, CC
;
YUAN, JS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT MAT SCI & ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT MAT SCI & ENGN,SALT LAKE CITY,UT 84112
YUAN, JS
;
COHEN, RM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT MAT SCI & ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT MAT SCI & ENGN,SALT LAKE CITY,UT 84112
COHEN, RM
;
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT MAT SCI & ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT MAT SCI & ENGN,SALT LAKE CITY,UT 84112
STRINGFELLOW, GB
.
JOURNAL OF CRYSTAL GROWTH,
1986,
74
(03)
:535
-542
[13]
REDUCTION OF BACKGROUND DOPING IN METALORGANIC VAPOR-PHASE EPITAXY OF GAAS USING TRIETHYLGALLIUM AT LOW REACTOR PRESSURES
[J].
KUECH, TF
论文数:
0
引用数:
0
h-index:
0
KUECH, TF
;
POTEMSKI, R
论文数:
0
引用数:
0
h-index:
0
POTEMSKI, R
.
APPLIED PHYSICS LETTERS,
1985,
47
(08)
:821
-823
[14]
ELEMENT INCORPORATION IN VAPOR GROWN 3-5 COMPOUNDS
[J].
MULLIN, JB
论文数:
0
引用数:
0
h-index:
0
MULLIN, JB
.
JOURNAL OF CRYSTAL GROWTH,
1977,
42
(DEC)
:77
-89
[15]
OHNO H, 1984, J CRYSTAL GROWTH, V68, P14
[16]
TIN DOPING OF MOVPE GROWN GALLIUM-ARSENIDE USING TETRAETHYLTIN
[J].
PARSONS, JD
论文数:
0
引用数:
0
h-index:
0
PARSONS, JD
;
KRAJENBRINK, FG
论文数:
0
引用数:
0
h-index:
0
KRAJENBRINK, FG
.
JOURNAL OF CRYSTAL GROWTH,
1984,
68
(01)
:60
-64
[17]
A CRITICAL-APPRAISAL OF GROWTH MECHANISMS IN MOVPE
[J].
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
STRINGFELLOW, GB
.
JOURNAL OF CRYSTAL GROWTH,
1984,
68
(01)
:111
-122
[18]
ELECTRON-MOBILITY AND FREE-CARRIER ABSORPTION IN INP - DETERMINATION OF THE COMPENSATION RATIO
[J].
WALUKIEWICZ, W
论文数:
0
引用数:
0
h-index:
0
WALUKIEWICZ, W
;
LAGOWSKI, J
论文数:
0
引用数:
0
h-index:
0
LAGOWSKI, J
;
JASTRZEBSKI, L
论文数:
0
引用数:
0
h-index:
0
JASTRZEBSKI, L
;
RAVA, P
论文数:
0
引用数:
0
h-index:
0
RAVA, P
;
LICHTENSTEIGER, M
论文数:
0
引用数:
0
h-index:
0
LICHTENSTEIGER, M
;
GATOS, CH
论文数:
0
引用数:
0
h-index:
0
GATOS, CH
;
GATOS, HC
论文数:
0
引用数:
0
h-index:
0
GATOS, HC
.
JOURNAL OF APPLIED PHYSICS,
1980,
51
(05)
:2659
-2668
←
1
2
→
共 18 条
[11]
DOPING OF GALLIUM-ARSENIDE IN A LOW-PRESSURE ORGANOMETALLIC CVD SYSTEM .1. SILANE
[J].
FIELD, RJ
论文数:
0
引用数:
0
h-index:
0
FIELD, RJ
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
GHANDHI, SK
.
JOURNAL OF CRYSTAL GROWTH,
1986,
74
(03)
:543
-550
[12]
DOPING STUDIES FOR INP GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
[J].
HSU, CC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT MAT SCI & ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT MAT SCI & ENGN,SALT LAKE CITY,UT 84112
HSU, CC
;
YUAN, JS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT MAT SCI & ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT MAT SCI & ENGN,SALT LAKE CITY,UT 84112
YUAN, JS
;
COHEN, RM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT MAT SCI & ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT MAT SCI & ENGN,SALT LAKE CITY,UT 84112
COHEN, RM
;
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT MAT SCI & ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT MAT SCI & ENGN,SALT LAKE CITY,UT 84112
STRINGFELLOW, GB
.
JOURNAL OF CRYSTAL GROWTH,
1986,
74
(03)
:535
-542
[13]
REDUCTION OF BACKGROUND DOPING IN METALORGANIC VAPOR-PHASE EPITAXY OF GAAS USING TRIETHYLGALLIUM AT LOW REACTOR PRESSURES
[J].
KUECH, TF
论文数:
0
引用数:
0
h-index:
0
KUECH, TF
;
POTEMSKI, R
论文数:
0
引用数:
0
h-index:
0
POTEMSKI, R
.
APPLIED PHYSICS LETTERS,
1985,
47
(08)
:821
-823
[14]
ELEMENT INCORPORATION IN VAPOR GROWN 3-5 COMPOUNDS
[J].
MULLIN, JB
论文数:
0
引用数:
0
h-index:
0
MULLIN, JB
.
JOURNAL OF CRYSTAL GROWTH,
1977,
42
(DEC)
:77
-89
[15]
OHNO H, 1984, J CRYSTAL GROWTH, V68, P14
[16]
TIN DOPING OF MOVPE GROWN GALLIUM-ARSENIDE USING TETRAETHYLTIN
[J].
PARSONS, JD
论文数:
0
引用数:
0
h-index:
0
PARSONS, JD
;
KRAJENBRINK, FG
论文数:
0
引用数:
0
h-index:
0
KRAJENBRINK, FG
.
JOURNAL OF CRYSTAL GROWTH,
1984,
68
(01)
:60
-64
[17]
A CRITICAL-APPRAISAL OF GROWTH MECHANISMS IN MOVPE
[J].
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
STRINGFELLOW, GB
.
JOURNAL OF CRYSTAL GROWTH,
1984,
68
(01)
:111
-122
[18]
ELECTRON-MOBILITY AND FREE-CARRIER ABSORPTION IN INP - DETERMINATION OF THE COMPENSATION RATIO
[J].
WALUKIEWICZ, W
论文数:
0
引用数:
0
h-index:
0
WALUKIEWICZ, W
;
LAGOWSKI, J
论文数:
0
引用数:
0
h-index:
0
LAGOWSKI, J
;
JASTRZEBSKI, L
论文数:
0
引用数:
0
h-index:
0
JASTRZEBSKI, L
;
RAVA, P
论文数:
0
引用数:
0
h-index:
0
RAVA, P
;
LICHTENSTEIGER, M
论文数:
0
引用数:
0
h-index:
0
LICHTENSTEIGER, M
;
GATOS, CH
论文数:
0
引用数:
0
h-index:
0
GATOS, CH
;
GATOS, HC
论文数:
0
引用数:
0
h-index:
0
GATOS, HC
.
JOURNAL OF APPLIED PHYSICS,
1980,
51
(05)
:2659
-2668
←
1
2
→