INSITU VAPOR-ETCH FOR INP MOVPE USING ETHYLENE DIBROMIDE

被引：13

作者：

CLAWSON, AR

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 69卷 / 2-3期

关键词：

D O I：

10.1016/0022-0248(84)90341-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：346 / 356

页数：11

共 10 条

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[7] LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF INP AND RELATED-COMPOUNDS [J].

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[10] FACTORS INFLUENCING THE GROWTH OF GA0.47 IN0.53 AS ON INP SUBSTRATES USING THE METALORGANIC PROCESS [J].

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