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FACTORS INFLUENCING THE GROWTH OF GA0.47 IN0.53 AS ON INP SUBSTRATES USING THE METALORGANIC PROCESS
被引:16
作者
:
WHITELEY, JS
论文数:
0
引用数:
0
h-index:
0
WHITELEY, JS
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
GHANDHI, SK
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1982年
/ 129卷
/ 02期
关键词
:
D O I
:
10.1149/1.2123853
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:383 / 388
页数:6
相关论文
共 24 条
[1]
OBSERVATION OF ETCH PITS PRODUCED IN INP BY NEW ETCHANTS
[J].
AKITA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Laboratories Limited, Kawasaki, 211, Kamikodanaka 1015, Nakahara
AKITA, K
;
KUSUNOKI, T
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Laboratories Limited, Kawasaki, 211, Kamikodanaka 1015, Nakahara
KUSUNOKI, T
;
KOMIYA, S
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Laboratories Limited, Kawasaki, 211, Kamikodanaka 1015, Nakahara
KOMIYA, S
;
KOTANI, T
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Laboratories Limited, Kawasaki, 211, Kamikodanaka 1015, Nakahara
KOTANI, T
.
JOURNAL OF CRYSTAL GROWTH,
1979,
46
(06)
:783
-787
[2]
HETEROEPITAXIAL INAS GROWN ON GAAS FROM TRIETHYLINDIUM AND ARSINE .1. GROWTH CHARACTERIZATION
[J].
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
BALIGA, BJ
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
GHANDHI, SK
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1974,
121
(12)
:1642
-1646
[3]
GROWTH AND PROPERTIES OF HETEROEPITAXIAL GALNAS ALLOYS ON GAAS SUBSTRATES USING TRIMETHYLGALLIUM, TRIETHYLINDIUM, AND ARSINE
[J].
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
BALIGA, BJ
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
GHANDHI, SK
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(05)
:683
-687
[4]
VAPOR-PHASE ETCHING AND POLISHING OF GAAS USING ARSENIC-TRICHLORIDE
[J].
BHAT, R
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
BHAT, R
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
GHANDHI, SK
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(09)
:1447
-1448
[5]
VAPOR-PHASE ETCHING AND POLISHING OF GALLIUM-ARSENIDE USING HYDROGEN-CHLORIDE GAS
[J].
BHAT, R
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
BHAT, R
;
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
BALIGA, BJ
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
GHANDHI, SK
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(10)
:1378
-1382
[6]
EFFECT OF CHLORIDE ETCHING ON GAAS EPITAXY USING TMG AND ASH3
[J].
BHAT, R
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
BHAT, R
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
GHANDHI, SK
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(05)
:771
-776
[7]
ORGANOMETALLIC VPE GROWTH OF GAAS1-YSBY USING TRIMETHYL ANTIMONY AND GA1-XINXAS USING TRIMETHYL ARSENIC
[J].
COOPER, CB
论文数:
0
引用数:
0
h-index:
0
COOPER, CB
;
LUDOWISE, MJ
论文数:
0
引用数:
0
h-index:
0
LUDOWISE, MJ
;
AEBI, V
论文数:
0
引用数:
0
h-index:
0
AEBI, V
;
MOON, RL
论文数:
0
引用数:
0
h-index:
0
MOON, RL
.
JOURNAL OF ELECTRONIC MATERIALS,
1980,
9
(02)
:299
-309
[8]
DECKER DR, 1975, 5TH P BIENN CORN EL, V5, P305
[9]
OPTICAL-PROPERTIES OF VAPOR-GROWN INXGA1-X AS EPITAXIAL-FILMS ON GAAS AND INXGA1-XP SUBSTRATES
[J].
ENSTROM, RE
论文数:
0
引用数:
0
h-index:
0
机构:
RCA, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
RCA, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
ENSTROM, RE
;
ZANZUCCHI, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
RCA, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
ZANZUCCHI, PJ
;
APPERT, JR
论文数:
0
引用数:
0
h-index:
0
机构:
RCA, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
RCA, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
APPERT, JR
.
JOURNAL OF APPLIED PHYSICS,
1974,
45
(01)
:300
-306
[10]
OPTIMUM SEMICONDUCTOR FOR MICROWAVE DEVICES
[J].
FAWCETT, W
论文数:
0
引用数:
0
h-index:
0
机构:
Royal Radar Establishment, Malvern Worcs.
FAWCETT, W
;
HILSUM, C
论文数:
0
引用数:
0
h-index:
0
机构:
Royal Radar Establishment, Malvern Worcs.
HILSUM, C
;
REES, HD
论文数:
0
引用数:
0
h-index:
0
机构:
Royal Radar Establishment, Malvern Worcs.
REES, HD
.
ELECTRONICS LETTERS,
1969,
5
(14)
:313
-&
←
1
2
3
→
共 24 条
[1]
OBSERVATION OF ETCH PITS PRODUCED IN INP BY NEW ETCHANTS
[J].
AKITA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Laboratories Limited, Kawasaki, 211, Kamikodanaka 1015, Nakahara
AKITA, K
;
KUSUNOKI, T
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Laboratories Limited, Kawasaki, 211, Kamikodanaka 1015, Nakahara
KUSUNOKI, T
;
KOMIYA, S
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Laboratories Limited, Kawasaki, 211, Kamikodanaka 1015, Nakahara
KOMIYA, S
;
KOTANI, T
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Laboratories Limited, Kawasaki, 211, Kamikodanaka 1015, Nakahara
KOTANI, T
.
JOURNAL OF CRYSTAL GROWTH,
1979,
46
(06)
:783
-787
[2]
HETEROEPITAXIAL INAS GROWN ON GAAS FROM TRIETHYLINDIUM AND ARSINE .1. GROWTH CHARACTERIZATION
[J].
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
BALIGA, BJ
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
GHANDHI, SK
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1974,
121
(12)
:1642
-1646
[3]
GROWTH AND PROPERTIES OF HETEROEPITAXIAL GALNAS ALLOYS ON GAAS SUBSTRATES USING TRIMETHYLGALLIUM, TRIETHYLINDIUM, AND ARSINE
[J].
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
BALIGA, BJ
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
GHANDHI, SK
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(05)
:683
-687
[4]
VAPOR-PHASE ETCHING AND POLISHING OF GAAS USING ARSENIC-TRICHLORIDE
[J].
BHAT, R
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
BHAT, R
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
GHANDHI, SK
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(09)
:1447
-1448
[5]
VAPOR-PHASE ETCHING AND POLISHING OF GALLIUM-ARSENIDE USING HYDROGEN-CHLORIDE GAS
[J].
BHAT, R
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
BHAT, R
;
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
BALIGA, BJ
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
GHANDHI, SK
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(10)
:1378
-1382
[6]
EFFECT OF CHLORIDE ETCHING ON GAAS EPITAXY USING TMG AND ASH3
[J].
BHAT, R
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
BHAT, R
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
GHANDHI, SK
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(05)
:771
-776
[7]
ORGANOMETALLIC VPE GROWTH OF GAAS1-YSBY USING TRIMETHYL ANTIMONY AND GA1-XINXAS USING TRIMETHYL ARSENIC
[J].
COOPER, CB
论文数:
0
引用数:
0
h-index:
0
COOPER, CB
;
LUDOWISE, MJ
论文数:
0
引用数:
0
h-index:
0
LUDOWISE, MJ
;
AEBI, V
论文数:
0
引用数:
0
h-index:
0
AEBI, V
;
MOON, RL
论文数:
0
引用数:
0
h-index:
0
MOON, RL
.
JOURNAL OF ELECTRONIC MATERIALS,
1980,
9
(02)
:299
-309
[8]
DECKER DR, 1975, 5TH P BIENN CORN EL, V5, P305
[9]
OPTICAL-PROPERTIES OF VAPOR-GROWN INXGA1-X AS EPITAXIAL-FILMS ON GAAS AND INXGA1-XP SUBSTRATES
[J].
ENSTROM, RE
论文数:
0
引用数:
0
h-index:
0
机构:
RCA, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
RCA, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
ENSTROM, RE
;
ZANZUCCHI, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
RCA, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
ZANZUCCHI, PJ
;
APPERT, JR
论文数:
0
引用数:
0
h-index:
0
机构:
RCA, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
RCA, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
APPERT, JR
.
JOURNAL OF APPLIED PHYSICS,
1974,
45
(01)
:300
-306
[10]
OPTIMUM SEMICONDUCTOR FOR MICROWAVE DEVICES
[J].
FAWCETT, W
论文数:
0
引用数:
0
h-index:
0
机构:
Royal Radar Establishment, Malvern Worcs.
FAWCETT, W
;
HILSUM, C
论文数:
0
引用数:
0
h-index:
0
机构:
Royal Radar Establishment, Malvern Worcs.
HILSUM, C
;
REES, HD
论文数:
0
引用数:
0
h-index:
0
机构:
Royal Radar Establishment, Malvern Worcs.
REES, HD
.
ELECTRONICS LETTERS,
1969,
5
(14)
:313
-&
←
1
2
3
→