LOW-PRESSURE MOVPE OF INP FROM TRIMETHYLINDIUM AND PHOSPHINE

被引：7

作者：

CLAWSON, AR

ELDER, DI

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1986年 / 15卷 / 02期

关键词：

D O I：

10.1007/BF02649912

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：111 / 116

页数：6

共 14 条

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[3]

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[9] REDUCTION OF BACKGROUND DOPING IN METALORGANIC VAPOR-PHASE EPITAXY OF GAAS USING TRIETHYLGALLIUM AT LOW REACTOR PRESSURES [J].

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