HIGH-FREQUENCY STUDY OF NONEQUILIBRIUM TRANSPORT IN HETEROSTRUCTURE BIPOLAR-TRANSISTORS

被引：11

作者：

CHEN, YK

LEVI, AFJ

NOTTENBURG, RN

BETON, PH

PANISH, MB

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 17期

关键词：

D O I：

10.1063/1.102174

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1789 / 1791

页数：3

共 9 条

[1] INFLUENCE OF TEMPERATURE ON ELECTRON-TRANSPORT IN BIPOLAR-DEVICES [J].

BARDYSZEWSKI, W ;

YEVICK, D .

APPLIED PHYSICS LETTERS, 1989, 54 (09) :837-839

[2] EXTREME NONEQUILIBRIUM ELECTRON-TRANSPORT IN HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

BERTHOLD, K ;

LEVI, AFJ ;

WALKER, J ;

MALIK, RJ .

APPLIED PHYSICS LETTERS, 1988, 52 (26) :2247-2249

[3] HIGH-FIELD TRANSPORT IN GAAS TRANSISTORS [J].

BERTHOLD, K ;

LEVI, AFJ ;

WALKER, J ;

MALIK, RJ .

APPLIED PHYSICS LETTERS, 1989, 54 (09) :813-815

[4] NUMERICAL STUDY OF NONEQUILIBRIUM ELECTRON-TRANSPORT IN ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

BETON, PH ;

LEVI, AFJ .

APPLIED PHYSICS LETTERS, 1989, 55 (03) :250-252

[5]

Chen Y., UNPUB

[6] SUBPICOSECOND INP/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS [J].

CHEN, YK ;

NOTTENBURG, RN ;

PANISH, MB ;

HAMM, RA ;

HUMPHREY, DA .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (06) :267-269

[7] DIELECTRIC-CONSTANT AND PLASMA FREQUENCY OF P-TYPE GE LIKE SEMICONDUCTORS [J].

COMBESCOT, M ;

NOZIERES, P .

SOLID STATE COMMUNICATIONS, 1972, 10 (03) :301-+

[8] NONEQUILIBRIUM ELECTRON-TRANSPORT IN BIPOLAR-DEVICES [J].

LEVI, AFJ ;

YAFET, Y .

APPLIED PHYSICS LETTERS, 1987, 51 (01) :42-44

[9] TRANSIENT TRANSPORT IN CENTRAL-VALLEY-DOMINATED TERNARY III-V ALLOYS [J].

MASSENGILL, LW ;

GLISSON, TH ;

HAUSER, JR ;

LITTLEJOHN, MA .

SOLID-STATE ELECTRONICS, 1986, 29 (07) :725-734

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