EXTREME NONEQUILIBRIUM ELECTRON-TRANSPORT IN HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：16

作者：

BERTHOLD, K

LEVI, AFJ

WALKER, J

MALIK, RJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 26期

关键词：

D O I：

10.1063/1.99545

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2247 / 2249

页数：3

共 7 条

[1] BASE TRANSPORT DYNAMICS IN A HETEROJUNCTION BIPOLAR-TRANSISTOR [J].

HAYES, JR ;

LEVI, AFJ ;

GOSSARD, AC ;

ENGLISH, JH .

APPLIED PHYSICS LETTERS, 1986, 49 (21) :1481-1483

[2] PHOTO-LUMINESCENCE OF ALXGA1-XAS/ALYGA1-YAS MULTIGUANTUM WELLS GROWN BY PULSED MOLECULAR-BEAM EPITAXY [J].

KAWABE, M ;

KONDO, M ;

MATSUURA, N ;

YAMAMOTO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (02) :L64-L66

[3]

Landau L. D., 1951, CLASSICAL THEORY FIE

[4] ELECTROLUMINESCENCE FROM THE BASE OF A GAAS/ALGAAS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTOR [J].

LEVI, AFJ ;

HAYES, JR ;

GOSSARD, AC ;

ENGLISH, JH .

APPLIED PHYSICS LETTERS, 1987, 50 (02) :98-100

[5] NONEQUILIBRIUM ELECTRON-TRANSPORT IN BIPOLAR-DEVICES [J].

LEVI, AFJ ;

YAFET, Y .

APPLIED PHYSICS LETTERS, 1987, 51 (01) :42-44

[6] ELECTRON-BEAM SOURCE MOLECULAR-BEAM EPITAXIAL-GROWTH OF ANALOG GRADED ALXGA1-XAS BALLISTIC TRANSISTORS [J].

MALIK, RJ ;

LEVI, AFJ .

APPLIED PHYSICS LETTERS, 1988, 52 (08) :651-653

[7] DC CHARACTERIZATION OF THE ALGAAS/GAAS TUNNELING EMITTER BIPOLAR-TRANSISTOR [J].

NAJJAR, FE ;

RADULESCU, DC ;

CHEN, YK ;

WICKS, GW ;

TASKER, PJ ;

EASTMAN, LF .

APPLIED PHYSICS LETTERS, 1987, 50 (26) :1915-1917

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