DC CHARACTERIZATION OF THE ALGAAS/GAAS TUNNELING EMITTER BIPOLAR-TRANSISTOR

被引：15

作者：

NAJJAR, FE

RADULESCU, DC

CHEN, YK

WICKS, GW

TASKER, PJ

EASTMAN, LF

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 26期

关键词：

D O I：

10.1063/1.97685

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1915 / 1917

页数：3

共 10 条

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[2] RESONANT TUNNELING THROUGH DOUBLE BARRIERS, PERPENDICULAR QUANTUM TRANSPORT PHENOMENA IN SUPERLATTICES, AND THEIR DEVICE APPLICATIONS [J].

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[4] ANOMALOUS REDISTRIBUTION OF BERYLLIUM IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25

[6] DIRECT OBSERVATION OF EFFECTIVE MASS FILTERING IN INGAAS/INP SUPERLATTICES [J].

LANG, DV ;

SERGENT, AM ;

PANISH, MB ;

TEMKIN, H .

APPLIED PHYSICS LETTERS, 1986, 49 (13) :812-814

[7] Indirect band-gap tunnelling through a (100) GaAs/AlAs/GaAs heterostructure [J].

Marsh, A. C. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1986, 1 (05) :320-326

[8] OBSERVATION BY RESONANT TUNNELING OF HIGH-ENERGY STATES IN GAAS-GA1-XALXAS QUANTUM-WELLS [J].

MENDEZ, EE ;

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WANG, WI .

PHYSICAL REVIEW B, 1986, 33 (10) :7368-7370

[9]

SZE SM, 1981, PHYSICS SEMICONDUCTO

[10]

XU JM, 1986, IEEE ELECTR DEVICE L, V7, P416

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