ELECTRON-BEAM SOURCE MOLECULAR-BEAM EPITAXIAL-GROWTH OF ANALOG GRADED ALXGA1-XAS BALLISTIC TRANSISTORS

被引：4

作者：

MALIK, RJ

LEVI, AFJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 08期

关键词：

D O I：

10.1063/1.99394

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：651 / 653

页数：3

共 18 条

[1] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GRADED BAND-GAP QUATERNARY GAXALYIN1-X-YAS MULTILAYER HETEROSTRUCTURES ON INP - APPLICATION TO A NOVEL AVALANCHE PHOTODIODE WITH AN ULTRAHIGH IONIZATION RATIO [J].

ALAVI, K ;

CHO, AY ;

CAPASSO, F ;

ALLAM, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03) :802-807

[2] BARRIER HEIGHT FLUCTUATIONS IN VERY SMALL DEVICES DUE TO THE DISCRETENESS OF THE DOPANTS [J].

ARNOLD, D ;

HESS, K .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (11) :5178-5180

[3]

BEAN J, IN PRESS J CRYST GRO

[4] COMPOSITIONALLY GRADED SEMICONDUCTORS AND THEIR DEVICE APPLICATIONS [J].

CAPASSO, F .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1986, 16 :263-291

[5]

GRUZINSKIS V, 1987, IN PRESS PHYSICA SCR

[6]

HARBISON JP, IN PRESS J CRYST GRO

[7] DYNAMICS OF EXTREME NONEQUILIBRIUM ELECTRON-TRANSPORT IN GAAS [J].

HAYES, JR ;

LEVI, AFJ .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1744-1752

[8] DIRECT OBSERVATION OF BALLISTIC TRANSPORT IN GAAS [J].

HEIBLUM, M ;

NATHAN, MI ;

THOMAS, DC ;

KNOEDLER, CM .

PHYSICAL REVIEW LETTERS, 1985, 55 (20) :2200-2203

[9] PHOTO-LUMINESCENCE OF ALXGA1-XAS/ALYGA1-YAS MULTIGUANTUM WELLS GROWN BY PULSED MOLECULAR-BEAM EPITAXY [J].

KAWABE, M ;

KONDO, M ;

MATSUURA, N ;

YAMAMOTO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (02) :L64-L66

[10]

Kroll N A, 1973, PRINCIPLES PLASMA PH

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