BARRIER HEIGHT FLUCTUATIONS IN VERY SMALL DEVICES DUE TO THE DISCRETENESS OF THE DOPANTS

被引：14

作者：

ARNOLD, D ^{[1
]}

HESS, K ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

关键词：

D O I：

10.1063/1.338293

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5178 / 5180

页数：3

共 12 条

[1] ASHCROFT N, 1976, SOLID STATE PHYSICS, V341
[2] OHMIC CONTACTS TO N-TYPE GAAS
BOUDVILLE, WJ
MCGILL, TC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1192 - 1196
[3] HOT-ELECTRON SPECTROSCOPY
HAYES, JR
LEVI, AFJ
WIEGMANN, W
[J]. ELECTRONICS LETTERS, 1984, 20 (21) : 851 - 852
[4] HOT-ELECTRON SPECTROSCOPY OF GAAS
HAYES, JR
LEVI, AFJ
WIEGMANN, W
[J]. PHYSICAL REVIEW LETTERS, 1985, 54 (14) : 1570 - 1572
[5] HEILBLUM M, 1985, PHYS REV LETT, V55, P2200
[6] THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE
KANE, EO
[J]. PHYSICAL REVIEW, 1963, 131 (01): : 79 - &
[7] LEVI AFJ, 1985, PHYS REV LETT, V55, P19
[8] PLANAR-DOPED BARRIERS IN GAAS BY MOLECULAR-BEAM EPITAXY
MALIK, RJ
AUCOIN, TR
ROSS, RL
BOARD, K
WOOD, CEC
EASTMAN, LF
[J]. ELECTRONICS LETTERS, 1980, 16 (22) : 836 - 837
[9] MULTIVALLEY EFFECTIVE-MASS APPROXIMATION FOR DONOR STATES IN SILICON .1. SHALLOW-LEVEL GROUP-V IMPURITIES
NING, TH
SAH, CT
[J]. PHYSICAL REVIEW B, 1971, 4 (10): : 3468 - &
[10] PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON
SHOCKLEY, W
[J]. SOLID-STATE ELECTRONICS, 1961, 2 (01) : 35 - +