MOLECULAR-BEAM EPITAXIAL-GROWTH OF GRADED BAND-GAP QUATERNARY GAXALYIN1-X-YAS MULTILAYER HETEROSTRUCTURES ON INP - APPLICATION TO A NOVEL AVALANCHE PHOTODIODE WITH AN ULTRAHIGH IONIZATION RATIO

被引：14

作者：

ALAVI, K ^{[1
]}

CHO, AY ^{[1
]}

CAPASSO, F ^{[1
]}

ALLAM, J ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 03期

关键词：

D O I：

10.1116/1.583755

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：802 / 807

页数：6

共 23 条

[1] OPTICALLY PUMPED 1.55-MU-M DOUBLE HETEROSTRUCTURE GAXALYIN1-X-YAS/ALUIN1-UAS LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

ALAVI, K ;

TEMKIN, H ;

WAGNER, WR ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1983, 42 (03) :254-256

[2] GA0.47IN0.53AS/AL0.48IN0.52AS MULTIQUANTUM-WELL LEDS EMITTING AT 1.6-MU-M [J].

ALAVI, K ;

PEARSALL, TP ;

FORREST, SR ;

CHO, AY .

ELECTRONICS LETTERS, 1983, 19 (06) :227-229

[3]

ALAVI K, 1984, 3RD INT C MOL BEAM E

[4]

ALLAM J, 1986, 13TH INT S GAAS REL

[5] STAIRCASE SOLID-STATE PHOTOMULTIPLIERS AND AVALANCHE PHOTO-DIODES WITH ENHANCED IONIZATION RATES RATIO [J].

CAPASSO, F ;

TSANG, WT ;

WILLIAMS, GF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) :381-390

[6] NEW AVALANCHE MULTIPLICATION PHENOMENON IN QUANTAM WILL SUPERLATTICES - EVIDENCE OF IMPACT IONIZATION ACROSS THE BAND-EDGE DISCONTINUITY [J].

CAPASSO, F ;

ALLAM, J ;

CHO, AY ;

MOHAMMED, K ;

MALIK, RJ ;

HUTCHINSON, AL ;

SIVCO, D .

APPLIED PHYSICS LETTERS, 1986, 48 (19) :1294-1296

[7]

Capasso F., 1983, International Electron Devices Meeting 1983. Technical Digest, P468

[8] NEW LONG WAVELENGTH AL0.48IN0.52AS/GA0.47IN0.53AS AVALANCHE PHOTO-DIODE GROWN BY MOLECULAR-BEAM EPITAXY [J].

CAPASSO, F ;

ALAVI, K ;

CHO, AY ;

FOY, PW ;

BETHEA, CG .

APPLIED PHYSICS LETTERS, 1983, 43 (11) :1040-1042

[9] NEW LOW DARK CURRENT, HIGH-SPEED AL0.48IN0.52AS/GA0.47IN0.53AS AVALANCHE PHOTODIODE BY MOLECULAR-BEAM EPITAXY FOR LONG WAVELENGTH FIBER OPTIC COMMUNICATION-SYSTEMS [J].

CAPASSO, F ;

KASPER, B ;

ALAVI, K ;

CHO, AY ;

PARSEY, JM .

APPLIED PHYSICS LETTERS, 1984, 44 (11) :1027-1029

[10]

CAPASSO F, 1987, IEEE ELECTRON DEVICE, V8, P4

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