HIGH-FIELD TRANSPORT IN GAAS TRANSISTORS

被引：17

作者：

BERTHOLD, K

LEVI, AFJ

WALKER, J

MALIK, RJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 09期

关键词：

D O I：

10.1063/1.100855

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：813 / 815

页数：3

共 14 条

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ALVES, ES ;

EAVES, L ;

HENINI, M ;

HUGHES, OH ;

LEADBEATER, ML ;

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TOOMBS, GA ;

HILL, G ;

PATE, MA .

ELECTRONICS LETTERS, 1988, 24 (18) :1190-1191

[2] EXTREME NONEQUILIBRIUM ELECTRON-TRANSPORT IN HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

BERTHOLD, K ;

LEVI, AFJ ;

WALKER, J ;

MALIK, RJ .

APPLIED PHYSICS LETTERS, 1988, 52 (26) :2247-2249

[3]

CONWELL EM, 1967, SOLID STATE PHYS S, V9

[4] OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT-TUNNELING STRUCTURES - REPLY [J].

GOLDMAN, VJ ;

TSUI, DC ;

CUNNINGHAM, JE .

PHYSICAL REVIEW LETTERS, 1987, 59 (14) :1623-1623

[5] OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT-TUNNELING STRUCTURES [J].

GOLDMAN, VJ ;

TSUI, DC ;

CUNNINGHAM, JE .

PHYSICAL REVIEW LETTERS, 1987, 58 (12) :1256-1259

[6] ELECTRON-TRANSPORT DYNAMICS IN QUANTIZED INTRINSIC GAAS [J].

LEVI, AFJ ;

SPAH, RJ ;

ENGLISH, JH .

PHYSICAL REVIEW B, 1987, 36 (17) :9402-9405

[7] NONEQUILIBRIUM ELECTRON-TRANSPORT IN BIPOLAR-DEVICES [J].

LEVI, AFJ ;

YAFET, Y .

APPLIED PHYSICS LETTERS, 1987, 51 (01) :42-44

[8] SCALING BALLISTIC HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

LEVI, AFJ .

ELECTRONICS LETTERS, 1988, 24 (20) :1273-1275

[9] SIMULATION OF EXTRINSIC BISTABILITY OF RESONANT TUNNELING STRUCTURES [J].

LIU, HC .

APPLIED PHYSICS LETTERS, 1988, 53 (06) :485-486

[10] TRANSIENT TRANSPORT IN CENTRAL-VALLEY-DOMINATED TERNARY III-V ALLOYS [J].

MASSENGILL, LW ;

GLISSON, TH ;

HAUSER, JR ;

LITTLEJOHN, MA .

SOLID-STATE ELECTRONICS, 1986, 29 (07) :725-734

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