NUMERICAL STUDY OF NONEQUILIBRIUM ELECTRON-TRANSPORT IN ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：9

作者：

BETON, PH ^{[1
]}

LEVI, AFJ ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 03期

关键词：

D O I：

10.1063/1.101921

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：250 / 252

页数：3

共 11 条

[1] INFLUENCE OF TEMPERATURE ON ELECTRON-TRANSPORT IN BIPOLAR-DEVICES
BARDYSZEWSKI, W
YEVICK, D
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (09) : 837 - 839
[2] EXTREME NONEQUILIBRIUM ELECTRON-TRANSPORT IN HETEROJUNCTION BIPOLAR-TRANSISTORS
BERTHOLD, K
LEVI, AFJ
WALKER, J
MALIK, RJ
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (26) : 2247 - 2249
[3] HIGH-FIELD TRANSPORT IN GAAS TRANSISTORS
BERTHOLD, K
LEVI, AFJ
WALKER, J
MALIK, RJ
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (09) : 813 - 815
[4] MONTE-CARLO SIMULATION OF HOT-ELECTRON SPECTRA
BETON, PH
LONG, AP
KELLY, MJ
[J]. SOLID-STATE ELECTRONICS, 1988, 31 (3-4) : 637 - 640
[5] DIELECTRIC-CONSTANT AND PLASMA FREQUENCY OF P-TYPE GE LIKE SEMICONDUCTORS
COMBESCOT, M
NOZIERES, P
[J]. SOLID STATE COMMUNICATIONS, 1972, 10 (03) : 301 - +
[6] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE
FAWCETT, W
BOARDMAN, AD
SWAIN, S
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) : 1963 - &
[7] A POSSIBLE NEAR-BALLISTIC COLLECTION IN AN ALGAAS GAAS HBT WITH A MODIFIED COLLECTOR STRUCTURE
ISHIBASHI, T
YAMAUCHI, Y
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (04) : 401 - 404
[8] SCALING BALLISTIC HETEROJUNCTION BIPOLAR-TRANSISTORS
LEVI, AFJ
[J]. ELECTRONICS LETTERS, 1988, 24 (20) : 1273 - 1275
[9] VELOCITY-FIELD CHARACTERISTICS OF GAAS WITH GAMMA-6(C)-L6(C)-X6(C) CONDUCTION-BAND ORDERING
LITTLEJOHN, MA
HAUSER, JR
GLISSON, TH
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4587 - 4590
[10] TRANSIENT TRANSPORT IN CENTRAL-VALLEY-DOMINATED TERNARY III-V ALLOYS
MASSENGILL, LW
GLISSON, TH
HAUSER, JR
LITTLEJOHN, MA
[J]. SOLID-STATE ELECTRONICS, 1986, 29 (07) : 725 - 734

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