Monolithic integration of a quantum-well laser and an optical amplifier using an asymmetric twin-waveguide structure

被引：17

作者：

Studenkov, PV ^{[1
]}

Gokhale, MR ^{[1
]}

Dries, JC ^{[1
]}

Forrest, SR ^{[1
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Ctr Photon & Optoelect Mat POEM, Princeton, NJ 08540 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 08期

关键词：

integrated optoelectronics; photonic integrated circuits; semiconductor optical amplifier (SOA); semiconductor waveguides;

D O I：

10.1109/68.701511

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate the monolithic integration of a 1.55-mu m wavelength InGaAsP-InP multiple-quantum-well (MQW) laser and a traveling-wave optical amplifier using an asymmetric, vertical twin-waveguide structure. The laser and amplifier share the same strained InGaAsP MQW active layer grown by gas-source molecular beam epitaxy, while the underlying passive waveguide layer is used for on-chip optical interconnections between the active devices. The asymmetric twin-waveguide structure uses the difference in modal gains to discriminate between the even and odd modes.

引用

页码：1088 / 1090

页数：3

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