2x2 InGaAsP/InP laser amplifier gate switch arrays using reactive ion etching

被引：8

作者：

Oh, KR

Ahn, JH

Kim, JS

Lee, SW

Kim, HM

Pyun, KE

Park, HM

机构：

[1] Optoelectronics Section, Electronics and Telecom. Res. Inst., Yusong, Taejon 305-600

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 01期

关键词：

optical switches; integrated optics; reactive ion etching; semiconductor optical amplifiers;

D O I：

10.1049/el:19960054

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Waveguide integrated 2x2 InGaAsP laser amplifier gale switch arrays were fabricated using MOVPE and RIE. For the first time, RIE was applied as an etching process for the butt-coupling of the amplifier and the waveguide. A very low fibre-to-fibre loss of 1.2dB was obtained, and the on/off extinction ratio exceeded 42dB.

引用

页码：39 / 40

页数：2

共 4 条

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