MONOLITHIC INGAASP-INP LASER-AMPLIFIER GATE SWITCH MATRIX

被引：14

作者：

BURTON, JD

FIDDYMENT, PJ

ROBERTSON, MJ

SULLY, P

机构：

[1] British telecom Laboratories, Suffolk, IP5 7RE, Martlesham Heath

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1993年 / 29卷 / 06期

关键词：

D O I：

10.1109/3.234465

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An InGaAsP-InP 2 x 2 laser amplifier gate switch matrix operating at 1,5 mum is reported with a fiber-to-fiber insertion loss of 3 dB. The switch consists of passive waveguides for branching and recombining, monolithically integrated with laser amplifiers. The passive waveguides perform the signal routing, and the amplifiers provide gain/absorption each path for on/off switching, achieving gain in the on state to compensate the losses. Dry-etched total internal reflection mirrors are employed as 90-degrees waveguide corner mirrors and also incorporated in the splitters in order to give a compact design. The on/off extinction ratio is > 45 dB and the crosstalk is < -45 dB.

引用

页码：2023 / 2027

页数：5

共 15 条

[1]

Adams M. J., 1985, IEE Proceedings J (Optoelectronics), V132, P58, DOI 10.1049/ip-j.1985.0012

[2] GAAS SINGLE-MODE RIB WAVE-GUIDES WITH REACTIVE ION-ETCHED TOTALLY REFLECTING CORNER MIRRORS [J].