Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits

被引:417
作者
Gundlach, D. J. [1 ]
Royer, J. E. [1 ]
Park, S. K. [2 ]
Subramanian, S. [3 ]
Jurchescu, O. D. [1 ,2 ]
Hamadani, B. H. [1 ]
Moad, A. J. [4 ]
Kline, R. J. [5 ]
Teague, L. C. [4 ]
Kirillov, O. [1 ]
Richter, C. A. [1 ]
Kushmerick, J. G. [4 ]
Richter, L. J. [4 ]
Parkin, S. R. [3 ]
Jackson, T. N.
Anthony, J. E. [3 ]
机构
[1] NIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA
[2] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA
[3] Univ Kentucky, Dept Chem, Lexington, KY 40506 USA
[4] Natl Inst Stand & Technol, Chem Sci & Technol Lab, Surface & Microanal Sci Div, Gaithersburg, MD 20899 USA
[5] Natl Inst Stand & Technol, Mat Sci & Engn Lab, Div Polymers, Gaithersburg, MD 20899 USA
基金
美国国家科学基金会;
关键词
D O I
10.1038/nmat2122
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The use of organic materials presents a tremendous opportunity to significantly impact the functionality and pervasiveness of large-area electronics. Commercialization of this technology requires reduction in manufacturing costs by exploiting inexpensive low-temperature deposition and patterning techniques, which typically lead to lower device performance. We report a low-cost approach to control the microstructure of solution-cast acene-based organic thin films through modification of interfacial chemistry. Chemically and selectively tailoring the source/drain contact interface is a novel route to initiating the crystallization of soluble organic semiconductors, leading to the growth on opposing contacts of crystalline films that extend into the transistor channel. This selective crystallization enables us to fabricate high-performance organic thin-film transistors and circuits, and to deterministically study the influence of the microstructure on the device characteristics. By connecting device fabrication to molecular design, we demonstrate that rapid film processing under ambient room conditions and high performance are not mutually exclusive.
引用
收藏
页码:216 / 221
页数:6
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