Nonuniform current distribution in metal/diamond/metal vertical structures

被引：11

作者：

Conte, G

Rossi, MC

Salvatori, S

Tersigni, F

Ascarelli, P

Cappelli, E

机构：

[1] Univ Rome Roma Tre, INFM, I-00146 Rome, Italy

[2] Univ Rome Roma Tre, Dept Elect Engn, I-00146 Rome, Italy

[3] CNR, Inst Methodol Inorgan & Plasmas, I-00016 Monterotondo, Rome, Italy

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 25期

关键词：

D O I：

10.1063/1.1583855

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The role of grain boundaries (GBs) in undoped polycrystalline diamond films has been investigated by dc and ac electrical measurements in a wide temperature range. Hopping transport along GB percolating paths and field-assisted thermal ionization of trapped charges are observed at low and high electric field strength, respectively. The temperature dependence of the ac conductivity, which reduces to a universal curve according to a random free-energy barrier model, suggests that, at low field strengths, current flow is mainly confined into GB domains in a wide temperature range. Only in the high-temperature and high-field ranges, do crystalline diamond grains become involved in current transport. (C) 2003 American Institute of Physics.

引用

页码：4459 / 4461

页数：3

共 16 条

[1]

CVD diamond dosimetric response evaluated by X-ray absorbers method [J].