Zeeman spin splittings in semiconductor nanostructures

被引：69

作者：

Kotlyar, R ^{[1
]}

Reinecke, TL

Bayer, M

Forchel, A

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.63.085310

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A systematic theoretical and experimental study of Zeeman spin splittings and g factors in semiconductor nanostructures is given. Six-band effective-mass calculations of electron, hole, and exciton spin splittings are made and are shown to account for experimental results presented here on In0.10Ga0.90As/GaAs systems for the size dependences of g factors in deep-etched quantum dots and wires and for the magnetic-field dependences of the Zeeman splittings in quantum wells. These effects are traced to band mixing, and an analytic form of the results is given that connects these two effects and describes their dependences on dimensionality.

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页数：5

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