High-Performance Thin-Film Transistors with DNA-Assisted Solution Processing of Isolated Single-Walled Carbon Nanotubes

被引：49

作者：

Asada, Yuki ^{[1
,2
]}

Miyata, Yasumitsu ^{[1
,2
]}

Ohno, Yutaka ^{[3
]}

Kitaura, Ryo ^{[1
,2
]}

Sugai, Toshiki ^{[1
,2
]}

Mizutani, Takashi ^{[3
]}

Shinohara, Hisanori ^{[1
,2
]}

机构：

[1] Nagoya Univ, Dept Chem, Chikusa Ku, Aichi 4648602, Japan

[2] Nagoya Univ, Inst Adv Res, Chikusa Ku, Aichi 4648602, Japan

[3] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Aichi 4648603, Japan

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 24期

关键词：

FIELD-EFFECT TRANSISTORS; ELECTRONICS; NETWORKS; SEPARATION; TRANSPARENT; WATER;

D O I：

10.1002/adma.200904006

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Controlling the morphology of single-walled carbon nanotubes (SWNTs) is essential to realize their excellent device characteristics in electronics. DNA-wrapped SWNTs provides an effective, scalable way to fabricate the super-uniform networks of highly isolated, structure-sorted SWNTs for thin-film transistors (TFTs). The DNA-SWNTs are easily formed into uniform, desired-density networks of individual nanotubes.

引用

页码：2698 / +

页数：5

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