Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures

被引：5

作者：

Chaldyshev, VV ^{[1
]}

Kunitsyn, AE

Tret'yakov, VV

Faleev, NN

Preobrazhenskii, VV

Putyato, MA

Semyagin, BR

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

SEMICONDUCTORS | 1998年 / 32卷 / 07期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1187485

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

X-ray spectral microanalysis, optical transmission measurements at near-infrared wavelengths, and x-ray diffractometry are used to show that the isovalent indium doping of gallium arsenide during molecular-beam epitaxy at low temperatures leads to an increase in the concentration of excess arsenic trapped in the growing layer. (C) 1998 American Institute of Physics.

引用

页码：692 / 695

页数：4