(Pb,Sr)TiO3 thin films for a ULSI DRAM capacitor prepared by liquid source misted chemical deposition

被引：28

作者：

Chung, HJ

Kim, JH

Woo, SI

机构：

[1] Korea Adv Inst Sci & Technol, Dept Chem Engn, Yusong Gu, Taejon 305701, South Korea

[2] Samsung Elect Co Ltd, Semicond R&D, Kyungki Do 449900, South Korea

来源：

CHEMISTRY OF MATERIALS | 2001年 / 13卷 / 05期

关键词：

D O I：

10.1021/cm0008157

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

(Pb,Sr)TiO3 (PST) thin films have been successfully grown on Pt-coated Si(100) wafers by the Liquid source misted chemical deposition method. The PST thin film has high crystallinity, a smooth surface, and uniform elemental composition. Electrical measurements revealed the S PST thin film has a high dielectric constant, low dielectric loss, and good insulating properties. These results indicate that the PST thin film is a promising material for a ULSI DRAM capacitor and other microelectronic device applications.

引用

页码：1441 / +

页数：4

共 15 条

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