Studies of film growth processes and surface structural characterization of ferroelectric memory-compatible SrBi2Ta2O9 layered perovskites via in situ, real-time ion-beam analysis

In situ, real-time studies of layered perovskite SrBi2Ta2O9 (SBT) film growth processes were performed using a time-of-flight ion scattering and recoil spectroscopy (TOF ISARS) technique. These studies revealed two important features related to the synthesis of SET films via ion-beam sputter-deposition, namely: (a) atomic oxygen originating from a multicomponent SET target during the sputtering process is incorporated in the growing film more efficiently than molecular oxygen; and (b) the SET surface appears to be terminated in an incomplete (Bi2O2)(2+) layer with a top surface of oxygen atoms, which may be responsible for the high resistance to polarization fatigue exhibited by Pt/SBT/Pt capacitors. (C) 1996 American Institute of Physics.