Femtosecond versus nanosecond laser machining: comparison of induced stresses and structural changes in silicon wafers

被引:133
作者
Amer, MS
El-Ashry, MA
Dosser, LR
Hix, KE
Maguire, JF
Irwin, B
机构
[1] Wright State Univ, Dept Mech & Mat Engn, Dayton, OH 45435 USA
[2] Mound Laser & Photon Ctr Inc, Miamisburg, OH 45342 USA
[3] Sciperio Inc, Stillwater, OK 74075 USA
关键词
Raman spectroscopy; laser machining; micromachining; silicon amorphization; induced stress; femtosecond laser machining;
D O I
10.1016/j.apsusc.2004.08.029
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Laser micromachining has proven to be a very successful tool for precision machining and microfabrication with applications in microelectronics, MEMS, medical device, aerospace, biomedical, and defense applications. Femtosecond (FS) laser micromachining is usually thought to be of minimal heat-affected zone (HAZ) local to the micromachined feature. The assumption of reduced HAZ is attributed to the absence of direct coupling of the laser energy into the thermal modes of the material during irradiation. However, a substantial HAZ is thought to exist when machining with lasers having pulse durations in the nanosecond (NS) regime. In this paper, we compare the results of micromachining a single crystal silicon wafer using a 150-femtosecond and a 30-nanosecond lasers. Induced stress and amorphization of the silicon single crystal were monitored using micro-Raman spectroscopy as a function of the fluence and pulse duration of the incident laser. The onset of average induced stress occurs at lower fluence when machining with the femtosecond pulse laser. Induced stresses were found to maximize at fluence of 44 J cm(-2) and 8 J cm(-2) for nanosecond and femtosecond pulsed lasers, respectively. In both laser pulse regimes, a maximum induced stress is observed at which point the induced stress begins to decrease as the fluence is increased. The maximum induced stress was comparable at 2.0 GPa and 1.5 GPa for the two lasers. For the nanosecond pulse laser, the induced amorphization reached a plateau of approximately 20% for fluence exceeding 22 J cm(-2). For the femtosecond pulse laser, however, induced amorphization was approximately 17% independent of the laser fluence within the experimental range. These two values can be considered nominally the same within experimental error. For femtosecond laser machining, some effect of the laser polarization on the amount of induced stress and amorphization was also observed. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:162 / 167
页数:6
相关论文
共 18 条
[1]   Laser fabrication of micron-size apertures for electron beam microcolumns [J].
Ahn, SJ ;
Kim, DW ;
Kim, HS ;
Cho, KH ;
Choi, SS .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 69 (Suppl 1) :S527-S530
[2]   Induced stresses and structural changes in silicon wafers as a result of laser micro-machining [J].
Amer, MS ;
Dosser, L ;
LeClair, S ;
Maguire, JF .
APPLIED SURFACE SCIENCE, 2002, 187 (3-4) :291-296
[3]  
AMIMOTO ST, SPIE, V3512, P123
[4]   Excimer laser induced surface modifications and matter interaction using double-pulse-technique (DPT) [J].
Bergmann, HW .
APPLIED SURFACE SCIENCE, 1996, 96-8 :287-295
[5]   Rapid prototyping of micromechanical devices using a Q-switched Nd:YAG laser with optional frequency doubling [J].
Dauer, S ;
Ehlert, A ;
Büttgenbach, S .
SENSORS AND ACTUATORS A-PHYSICAL, 1999, 76 (1-3) :381-385
[6]   Experimental validation of mechanical stress models by micro-Raman spectroscopy [J].
DeWolf, I ;
Pozzat, G ;
Pinardi, K ;
Howard, DJ ;
Ignat, M ;
Jain, SC ;
Maes, HE .
MICROELECTRONICS AND RELIABILITY, 1996, 36 (11-12) :1751-1754
[7]   PROCESS-INDUCED MECHANICAL-STRESS IN ISOLATION STRUCTURES STUDIED BY MICRO-RAMAN SPECTROSCOPY [J].
DEWOLF, I ;
NORSTROM, H ;
MAES, HE .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (07) :4490-4500
[8]   Effect of phase transformations on the shape of the unloading curve in the nanoindentation of silicon [J].
Domnich, V ;
Gogotsi, Y ;
Dub, S .
APPLIED PHYSICS LETTERS, 2000, 76 (16) :2214-2216
[9]   Raman microspectroscopy study of processing-induced phase transformations and residual stress in silicon [J].
Gogotsi, Y ;
Baek, C ;
Kirscht, F .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (10) :936-944
[10]  
*ICALEO, 2000, LAS MICR SESS OCT 2