Wavefunction delocalization of strongly-localized Stark-ladder states in a GaAs/AlAs superlattice

被引：1

作者：

Ando, M ^{[1
]}

Nakayama, M

Nishimura, H

Hosoda, M

Ohtani, N

Egami, N

Fujiwara, K

机构：

[1] Osaka City Univ, Fac Engn, Dept Appl Chem, Sumiyoshi Ku, Osaka 558, Japan

[2] ATR, Opt Radio Commun Res Labs, Kyoto 61902, Japan

[3] ATR, Adapt Commun Res Labs, Kyoto 61902, Japan

[4] Kyushu Inst Technol, Dept Elect Engn, Tobata Ku, Kitakyushu, Fukuoka 804, Japan

来源：

SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 7-8期

关键词：

D O I：

10.1016/S0038-1101(98)00057-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the wavefunction-localization properties as a function of electric field from similar to 30 to similar to 300 kV/cm in a GaAs(6.8 nm)/AlAs(0.8 nm) superlattice by using electroreflectance spectroscopy to observe Stark-ladder transitions. It has been found from the electric-field dependence of the electroreflectance spectra that the electron wavefunctions are delocalized after they are fully localized in individual quantum wells in a high electric-field regime. We conclude that the wavefunction delocalization results from the tunneling effect induced by the interaction between the spatially-separated first and second Stark-ladder states from the analysis of the eigenstates based on a transfer-matrix method in the framework of an envelope-function approximation. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：1499 / 1503

页数：5

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