Conductivity fluctuation within a crystalline domain and its origin in pentacene thin-film transistors

被引：34

作者：

Ohashi, Noboru ^{[1
]}

Tomii, Hiroshi ^{[1
]}

Matsubara, Ryousuke ^{[1
]}

Sakai, Masatoshi ^{[1
]}

Kudo, Kazuhiro ^{[1
]}

Nakamura, Masakazu ^{[1
]}

机构：

[1] Chiba Univ, Grad Sch Engn, Dept Elect & Elect Engn, Chiba 2638522, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 16期

关键词：

D O I：

10.1063/1.2799743

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Surface topography and high-resolution potential images in a thin-film transistor with a polycrystalline pentacene active layer have been measured by atomic-force-microscope potentiometry. A potential fluctuation independent of topographic features was found in large flat molecular terraces. The origin of the potential fluctuation was concluded to be the fluctuation of the top level of the highest-occupied-molecular-orbital band, which results in the variation of local carrier concentration. The full width at half maximum of the band fluctuation was estimated to be 12 meV, which might reduce the mean carrier velocity in crystalline domains. (C) 2007 American Institute of Physics.

引用

页数：3

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