Periodic faceting of a Si(113) surface miscut towards [1(1)over-bar-0]

被引:29
作者
Yoon, M
Mochrie, SGJ
Tate, MW
Gruner, SM
Eikenberry, EF
机构
[1] MIT, Dept Phys, Cambridge, MA 02139 USA
[2] Princeton Univ, Dept Phys, Princeton, NJ 08544 USA
基金
美国国家卫生研究院; 美国国家科学基金会;
关键词
silicon; stepped single crystal surfaces; surface structure; X-ray scattering; diffraction and reflection;
D O I
10.1016/S0039-6028(98)00333-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The equilibrium morphology of a Si(113) surface miscut by a polar angle of 1.8 degrees away from the (113) orientation along an azimuth within 3.5 degrees of the [1 (1) over bar 0] direction has been characterized by X-ray scattering for temperatures between 900 and 1450 K. Above 1215 K, a uniformly stepped surface is found. Between 1075 and 1215 K, the surface phase-separates into two coexisting phases of different polar and azimuthal orientations. With decreasing temperature, the phase with the smaller polar angle approaches the (113) orientation, while the other phase exhibits an increasingly large polar angle (up to 9 degrees). The two coexisting phases form a periodic groove structure with periodicity ranging from 740 to 940 Angstrom, depending on the temperature. Below 1075 K, the phase with the larger polar angle further phase-separates into two phases of different azimuth (+/- 17 degrees), resulting in coexistence among three distinct phases. The three coexisting phases form a quasi-periodic array of pyramids. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:70 / 85
页数:16
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