micro-machined silicon device;
chemical sensor;
gas sensor;
accelerated life testing;
D O I:
10.1109/24.722276
中图分类号:
TP3 [计算技术、计算机技术];
学科分类号:
0812 ;
摘要:
Reliability & quality assurance are a major concern in the semiconductor industry. However, when developing a new mass-production technology, like micro-machined silicon-based devices, these aspects became particularly critical. Indeed, silicon-based thin-film tin-dioxide gas-sensor reliability has not been deeply studied; most of the completed studies address thick-film devices made on alumina substrates [1 - 3]. New test- methods & equipment must be engineered to meet the ever-increasing expectations of the marketplace. This paper justifies the need for new accelerated tests for chemical sensors. A new method which allows 'stressing the entire device structure' has been implemented. Test results obtained using this new approach allow us to evaluate the sensor reliability in the range of the requirements of applications using gas sensors.