Fabrication of SiGe/Si/Cr bent cantilevers based on self-rolling of epitaxial films

被引：12

作者：

Golod, SV ^{[1
]}

Grützmacher, D

David, C

Deckardt, E

Kirfel, O

Mentese, S

Ketterer, B

机构：

[1] Paul Scherrer Inst, CH-5232 Villigen, Switzerland

[2] Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

MICROELECTRONIC ENGINEERING | 2003年 / 67-8卷

关键词：

bent cantilevers; silicon-germanium heterostructures; self-rolling process;

D O I：

10.1016/S0167-9317(03)00119-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：595 / 601

页数：7

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