Distribution of residual stresses in boron doped p(+) silicon films

Based on a cross-sectional transmission electron microscopy study of dislocation configurations in boron doped p(+) silicon layer, the distribution of residual stresses in the boron diffused silicon layer as well as in the p(+) silicon films that were made from this layer are formulated. The calculated deflections of the pi cantilever beams that underwent different processes match well with the experimental data. The calculation of the distribution of the residual stresses in the p(+) silicon films demonstrates that by adjusting the boron concentration profile using a proper postdiffusion process, the stress pattern can be controlled and, hence, the film buckling can be eliminated.