Electron-induced attachment of chlorinated benzenes to Si(100)2 x 1

被引:25
作者
Naumkin, FY
Polanyi, JC
Rogers, D
Hofer, W
Fisher, A
机构
[1] Univ Toronto, Lash Miller Chem Labs, Dept Chem, Toronto, ON M5S 3H6, Canada
[2] Univ Liverpool, Surface Sci Res Ctr, Liverpool L69 3BX, Merseyside, England
[3] UCL, Dept Phys & Astron, London WC1E 6BT, England
基金
加拿大自然科学与工程研究理事会;
关键词
aromatics; silicon; chemisorption; scanning tunneling microscopy; surface chemical reaction;
D O I
10.1016/j.susc.2003.09.042
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Thermal (300 K) and electron-induced reactions of benzene (Bz), chlorobenzene (ClPh), 1,2-dichlorobenzene (1,2-diClPh) and 1,4-dichlorobenzene (1,4-diClPh) with Si(l 0 0)2 x 1 have been examined by scanning tunneling microscopy (STM). Thermal reactions of Bz yielded predominantly the quadruply-sigma-bound tight bridge, TB, configuration on top of the Si dimer-rows, For ClPh and 1,2-diClPh, which resembled one another, thermal reaction led with 45-50% yield to the doubly-sigma-bound butterfly, BF, configuration, also on top of the dimer-row, and with 20% yield to a novel 'displaced', D, configuration to one side of a dimer-row. The adsorbate 1,4-diClPh was alone in favouring a configuration in which neighbouring dimer-rows were 'linked' (L) by a bright-feature centrally located between the dimer-rows. By ab initio calculation, we interpret D as due to the rupture of one C-Cl bond per adsorbate molecule, and L to the rupture of two C-Cl's. The breaking of this weak bond is followed in the former case by attachment of the aromatic ring to one dimer-row, and in the latter to attachment to two adjacent dimer-rows. Application of a -5 V voltage pulse to the STM tip substantially increased the percentage of row-linking structures, L, for 1,4-diClPh, but neither -5 V nor +4-6 V volt pulses resulted in L-type binding of Bz. The postulated L product of 1,4-diClPh, with an aromatic ring linking the two inner Si atoms of adjacent dimer-rows and the two Cl's on the outer Si atoms of the dimer-rows, is shown to be in accord with ab initio simulation of the observed STM image. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:324 / 334
页数:11
相关论文
共 17 条
[1]   Controlling organic reactions on silicon surfaces with a scanning tunneling microscope: Theoretical and experimental studies of resonance-mediated desorption [J].
Alavi, S ;
Rousseau, R ;
Lopinski, GP ;
Wolkow, RA ;
Seideman, T .
FARADAY DISCUSSIONS, 2000, 117 :213-229
[2]   TUNNELLING FROM A MANY-PARTICLE POINT OF VIEW [J].
BARDEEN, J .
PHYSICAL REVIEW LETTERS, 1961, 6 (02) :57-&
[3]  
Briggs GAD, 1999, SURF SCI REP, V33, P3
[4]   ATOMICALLY RESOLVED SCANNING-TUNNELING-MICROSCOPY STUDY OF THE ADSORPTION AND DISSOCIATION OF METHYLCHLORIDE ON SI(001) [J].
BRONIKOWSKI, MJ ;
HAMERS, RJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (03) :777-781
[5]   Photoetching of Si(111)-(7x7) studied by STM [J].
Chen, XH ;
Polanyi, JC ;
Rogers, D .
SURFACE SCIENCE, 1997, 376 (1-3) :77-86
[6]   IMAGING OF CHEMICAL-BOND FORMATION WITH THE SCANNING TUNNELING MICROSCOPE - NH3 DISSOCIATION ON SI(001) [J].
HAMERS, RJ ;
AVOURIS, P ;
BOZSO, F .
PHYSICAL REVIEW LETTERS, 1987, 59 (18) :2071-2074
[7]   Scanning tunneling microscopy of binary alloys: first principles calculation of the current for PtX (100) surfaces [J].
Hofer, WA ;
Redinger, J .
SURFACE SCIENCE, 2000, 447 (1-3) :51-61
[8]   Electronic structure and STM images of self-assembled styrene lines on a Si(100) surface [J].
Hofer, WA ;
Fisher, AJ ;
Lopinski, GP ;
Wolkow, RA .
CHEMICAL PHYSICS LETTERS, 2002, 365 (1-2) :129-134
[9]   Electron and photon irradiation of benzene and chlorobenzene on Si(111) 7 x 7 [J].
Jiang, GP ;
Polanyi, JC ;
Rogers, D .
SURFACE SCIENCE, 2003, 544 (2-3) :147-161
[10]   Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set [J].
Kresse, G ;
Furthmuller, J .
PHYSICAL REVIEW B, 1996, 54 (16) :11169-11186