Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications -: art. no. 082909

被引：15

作者：

Seong, NJ

Yoon, SG ^{[1
]}

Lee, WJ

机构：

[1] Chungnam Natl Univ, Dept Mat Sci & Engn, Taejon 305764, South Korea

[2] Dong Eui Univ, Elect Ceram Ctr, Dept Adv Mat Engn, Pusan 614714, South Korea

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

D O I：

10.1063/1.2034100

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nanomixed Ga2O3-TiO2 films with 5 nm thickness were deposited at 200 degrees C on Si (001) substrates using plasma-enhanced atomic-layer deposition for gate dielectric applications. While TiO2 films deposited on Si substrates are crystallized at an annealing temperature of 500 degrees C, Ga2O3-TiO2 nanomixed films show an incipient crystallization at 950 degrees C and exhibited a good thermal stability even at about 950 degrees C for 1 min. The dielectric constant of TaN/Ga2O3-TiO2/Si capacitors is larger than that of TaN/TiO2-Ga2O3/Si capacitors in nanomixed films annealed at 900 degrees C for 1 min. The EOT of the TaN/Ga2O3-TiO2/Si capacitors was similar to 6 A up to an annealing temperature of 700 degrees C but increases with increasing annealing temperature above 700 degrees C for 1 min. The TaN/Ga2O3-TiO2/Si capacitors annealed at 1000 degrees C exhibit a leakage current density of similar to 4x10(-3) A/cm(2) at -1.5 V and an interfacial charge density of 1.5x10(11) cm(-2) eV(-1). The Ga2O3-TiO2 nanomixed films are new candidate materials for gate dielectric applications. (c) 2005 American Institute of Physics.

引用

页数：3

共 18 条

[1] Hybrid titanium-aluminum oxide layer as alternative high-k gate dielectric for the next generation of complementary metal-oxide-semiconductor devices -: art. no. 042904 [J].