Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application

被引：182

作者：

Qi, WJ ^{[1
]}

Nieh, R ^{[1
]}

Lee, BH ^{[1
]}

Kang, LG ^{[1
]}

Jeon, Y ^{[1
]}

Lee, JC ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 20期

关键词：

D O I：

10.1063/1.1326482

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZrO2 thin film has been studied as an alternative gate dielectric. It was deposited directly on a Si substrate by reactive sputtering. An equivalent oxide thickness of less than 11 Angstrom with a leakage current of 1.9x10(-3) A/cm(2) at -1.5 V relative to the flat band voltage has been obtained. Well-behaved capacitance-voltage characteristics with an interface state density of less than 10(11) cm(-2) eV(-1) and no significant frequency dispersion have been achieved. Excellent reliability properties (e.g., low charge trapping rate, good time-dependent dielectric breakdown, low stress-induced leakage current, and high dielectric breakdown) have also been obtained. (C) 2000 American Institute of Physics. [S0003-6951(00)04846-4].

引用

页码：3269 / 3271

页数：3

共 22 条

[1] Fabrication and characterization of Si-MOSFET's with PECVD amorphous Ta2O5 gate insulator
Autran, JL
Devine, R
Chaneliere, C
Balland, B
[J]. IEEE ELECTRON DEVICE LETTERS, 1997, 18 (09) : 447 - 449
[2] THIN-FILMS OF METAL-OXIDES ON SILICON BY CHEMICAL VAPOR-DEPOSITION WITH ORGANOMETALLIC COMPOUNDS .1.
BALOG, M
SCHIEBER, M
MICHMAN, M
PATAI, S
[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 298 - &
[3] CHARACTERISTICS OF GROWTH OF FILMS OF ZIRCONIUM AND HAFNIUM OXIDES (ZRO2, HFO2) BY THERMAL-DECOMPOSITION OF ZIRCONIUM AND HAFNIUM BETA-DIKETONATE COMPLEXES IN THE PRESENCE AND ABSENCE OF OXYGEN
BALOG, M
SCHIEBER, M
MICHMAN, M
PATAI, S
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) : 1203 - 1207
[4] CHEMICAL VAPOR-DEPOSITION AND CHARACTERIZATION OF ZRO2 FILMS FROM ORGANOMETALLIC COMPOUNDS
BALOG, M
SCHIEBER, M
MICHMAN, M
PATAI, S
[J]. THIN SOLID FILMS, 1977, 47 (02) : 109 - 120
[5] ZrO2 film growth by chemical vapor deposition using zirconium tetra-tert-butoxide
Cameron, MA
George, SM
[J]. THIN SOLID FILMS, 1999, 348 (1-2) : 90 - 98
[6] COX PA, 1992, TRANSITION METAL OXI, P108
[7] High quality ultra-thin TiO2/Si3N4 gate dielectric for giga scale MOS technology
Guo, X
Ma, TP
Tamagawa, T
Halpern, BL
[J]. INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 377 - 380
[8] A 1.1 nm oxide equivalent gate insulator formed using TiO2 on nitrided silicon
He, B
Ma, T
Campbell, SA
Gladfelter, WL
[J]. INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 1038 - 1040
[9] Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors
Henson, WK
Ahmed, KZ
Vogel, EM
Hauser, JR
Wortman, JJ
Venables, RD
Xu, M
Venables, D
[J]. IEEE ELECTRON DEVICE LETTERS, 1999, 20 (04) : 179 - 181
[10] Thermodynamic stability of binary oxides in contact with silicon
Hubbard, KJ
Schlom, DG
[J]. JOURNAL OF MATERIALS RESEARCH, 1996, 11 (11) : 2757 - 2776

← 1 2 3 →