Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors

被引：143

作者：

Henson, WK ^{[1
]}

Ahmed, KZ

Vogel, EM

Hauser, JR

Wortman, JJ

Venables, RD

Xu, M

Venables, D

机构：

[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

[2] Adv Micron Devices, Sunnyvale, CA 94088 USA

[3] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA

[4] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 04期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/55.753759

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-frequency capacitance-voltage (C-V) measurements have been made on ultrathin oxide metal-oxide-semiconductor (MOS) capacitors. The sensitivity of extracted oxide thickness to series resistance and gate leakage is demonstrated. Guidelines are outlined for reliable and accurate estimation of oxide thickness from C-V measurements for oxides down to 1.4 nm.

引用

页码：179 / 181

页数：3

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