Interstitial H2 in germanium by Raman scattering and ab initio calculations -: art. no. 153201

被引：15

作者：

Hiller, M ^{[1
]}

Lavrov, EV

Weber, J

Hourahine, B

Jones, R

Briddon, PR

机构：

[1] Tech Univ Dresden, Inst Appl Phys, D-01062 Dresden, Germany

[2] Univ Strathclyde, Dept Phys, Glasgow G4 0NG, Lanark, Scotland

[3] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England

[4] Newcastle Univ, Sch Nat Sci, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

来源：

PHYSICAL REVIEW B | 2005年 / 72卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.72.153201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single-crystalline germanium wafers exposed to hydrogen and/or deuterium plasma are studied by means of Raman scattering. The Raman frequencies are compared to results of ab initio calculations. For samples treated with pure hydrogen, Raman measurements performed at a temperature of 80 K reveal two sharp lines at 3826 and 3834 cm(-1) with an intensity ratio of 3:1, which are assigned to ortho- and para-H-2 trapped at the interstitial T site of the lattice.

引用

页数：4

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