InGaAs-AlInAs/InP terahertz quantum cascade laser

被引：55

作者：

Ajili, L ^{[1
]}

Scalari, G ^{[1
]}

Hoyler, N ^{[1
]}

Giovannini, M ^{[1
]}

Faist, J ^{[1
]}

机构：

[1] Univ Neuchatel, Inst Phys, CH-2000 Neuchatel, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 14期

基金：

瑞士国家科学基金会;

关键词：

D O I：

10.1063/1.2081122

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Operation of a quantum-cascade laser based on the In0.52Al0.48As-In0.53Ga0.47As/InP material is demonstrated at a frequency of 3.6 terahertz. The active region is based on a bound-to-continuum transition combined with an optical phonon extraction. The optical waveguide exploits a combination of metallic and dielectric confinement. Threshold current density of 460 A/cm(2) at 10 K and a maximum operating temperature of 45 K are achieved. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 17 条

[1] 2.9 THz quantum cascade lasers operating up to 70 K in continuous wave [J].

Barbieri, S ;

Alton, J ;

Beere, HE ;

Fowler, J ;

Linfield, EH ;

Ritchie, DA .

APPLIED PHYSICS LETTERS, 2004, 85 (10) :1674-1676

[2] Terahertz intersubband emission in strong magnetic fields [J].

Blaser, S ;

Rochat, M ;

Beck, M ;

Hofstetter, D ;

Faist, J .

APPLIED PHYSICS LETTERS, 2002, 81 (01) :67-69

[3] Intersubband electroluminescence from silicon-based quantum cascade structures [J].

Dehlinger, G ;

Diehl, L ;

Gennser, U ;

Sigg, H ;

Faist, J ;

Ensslin, K ;

Grützmacher, D ;

Müller, E .

SCIENCE, 2000, 290 (5500) :2277-+

[4] QUANTUM CASCADE LASER [J].

FAIST, J ;

CAPASSO, F ;

SIVCO, DL ;

SIRTORI, C ;

HUTCHINSON, AL ;

CHO, AY .

SCIENCE, 1994, 264 (5158) :553-556

[5] Terahertz semiconductor-heterostructure laser [J].

Köhler, R ;

Tredicucci, A ;

Beltram, F ;

Beere, HE ;

Linfield, EH ;

Davies, AG ;

Ritchie, DA ;

Iotti, RC ;

Rossi, F .

NATURE, 2002, 417 (6885) :156-159

[6] InAs/AlSb quantum cascade lasers operating at 10 μm [J].

Ohtani, K ;

Ohno, H .

APPLIED PHYSICS LETTERS, 2003, 82 (07) :1003-1005

[7] ELECTRON MOBILITIES EXCEEDING 107 CM2/V S IN MODULATION-DOPED GAAS [J].

PFEIFFER, L ;

WEST, KW ;

STORMER, HL ;

BALDWIN, KW .

APPLIED PHYSICS LETTERS, 1989, 55 (18) :1888-1890

[8] High-temperature performance of GaAs-based bound-to-continuum quantum-cascade lasers [J].

Pflügl, C ;

Schrenk, W ;

Anders, S ;

Strasser, G ;

Becker, C ;

Sirtori, C ;

Bonetti, Y ;

Muller, A .

APPLIED PHYSICS LETTERS, 2003, 83 (23) :4698-4700

[9] TWO-DIMENSIONAL ELECTRON-TRANSPORT IN SEMICONDUCTOR LAYERS .1. PHONON-SCATTERING [J].

PRICE, PJ .

ANNALS OF PHYSICS, 1981, 133 (02) :217-239

[10] Electrically pumped Terahertz quantum well sources [J].

Rochat, M ;

Faist, J ;

Beck, M ;

Oesterle, U .

PHYSICA E, 2000, 7 (1-2) :44-47

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