InAs/AlSb quantum cascade lasers operating at 10 μm

被引：55

作者：

Ohtani, K ^{[1
]}

Ohno, H ^{[1
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 07期

关键词：

D O I：

10.1063/1.1545151

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InAs/AlSb intersubband quantum cascade lasers based on bound-to-continuum transitions are fabricated and operation at 10 mum is demonstrated. A spatially indirect intersubband transition together with a double plasmon waveguide structure is employed. Threshold current density is 4.9 kA/cm(2) at 4 K. Temperature dependence of the threshold current density is also presented. (C) 2003 American Institute of Physics.

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页码：1003 / 1005

页数：3

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