Increasing the extraction efficiency of AlGaInP LEDs via n-side surface roughening

被引：51

作者：

Lee, YJ ^{[1
]}

Kuo, HC

Wang, SC

Hsu, TC

Hsieh, MH

Jou, MJ

Lee, BJ

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan

[3] Epistar Corp, Hsinchu 300, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 11期

关键词：

AlGaInP; light-emitting diode (LED); surface roughening;

D O I：

10.1109/LPT.2005.858153

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An n-side-up AlGaInP-based light-emitting diode (LED) with a triangle-like surface morphology was fabricated using the adhesive layer bonding technique, followed by wet etching to roughen the surface. The light output power of the roughened-surface LED was 1.6 times higher than that of a flat-surface LED at an injection current of 20 mA, i.e., a significant improvement attributed to the ability of the roughened surface to not only reduce the internal reflection between the rear mirror system and the semiconductor-air interface, but also to effectively scatter the light outside the LED device.

引用

页码：2289 / 2291

页数：3

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