High-brightness AlGaInP light-emitting diodes using surface texturing

被引：19

作者：

Linder, N ^{[1
]}

Kugler, S ^{[1
]}

Stauss, P ^{[1
]}

Streubel, KP ^{[1
]}

Wirth, R ^{[1
]}

Zull, H ^{[1
]}

机构：

[1] OSRAM Opto Semicond, D-93049 Regensburg, Germany

来源：

LIGHT-EMITTING DIODES: RESEARCH MANUFACTURING, AND APPLICATIONS V | 2001年 / 4278卷

关键词：

light-emitting diodes; AlGaInP; surface texturing;

D O I：

10.1117/12.426852

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

There is a large number of new applications in lighting and display technology where high-brightness AlGaInP-LEDs can provide cost-efficient solutions for the red to yellow color range. Osram Opto Semiconductors has developed a new generation of MOVPE-grown AlInGaP-LEDs to meet these demands. Our structures use optimized epitaxial layer design, improved contact geometry and a new type of surface texturing. Based on this technology we achieve luminous efficiencies of more than 30 1m/W and wallplug efficiencies exceeding 10% for LEDs on absorbing GaAs substrates. The epitaxial structure does not require the growth of extremely thick window layers and standard processes are used for the chip fabrication. This allows for high production yields and cost-efficient production.

引用

页码：19 / 25

页数：5

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