Highly strained InGaAs QW VCSEL with lasing wavelength at 1.22μm

被引：18

作者：

Ryu, SW ^{[1
]}

Dapkus, PD ^{[1
]}

机构：

[1] Univ So Calif, Photon Ctr, Dept Elect Engn, Los Angeles, CA 90089 USA

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 03期

关键词：

D O I：

10.1049/el:20010126

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vertical cavity surface emitting lasers with a highly strained InGaAs quantum well are demonstrated. Room temperature continuous wave operation was achieved, with a lasing wavelength at 1.22 mum. A high slope efficiency of 0.63W/A and a maximum power around 1 mW were achieved.

引用

页码：177 / 178

页数：2

共 5 条

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